1. Precarpathian National University Repository
  2. Періодичні видання ПНУ
  3. Наукові журнали
  4. Фізика і хімія твердого тіла
  5. 2014
  6. Т. 15, № 1
Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/10123
Title: Impedance of Sі Wires at Metal-Insulator Transition
Authors: Druzhinin, A.
Ostrovskii, I.
Khoverko, Yu.
Koretskyy, R.
Nichkalo, S.
Keywords: magnetoresistance
impedance spectroscopy
localization radius
Issue Date: 2014
Publisher: Vasyl Stefanyk Precarpathian National University
Citation: Druzhinin A. A. Impedance of Sі Wires at Metal-Insulator Transition / A. A. Druzhinin, I. P. Ostrovskii, Yu. N. Khoverko1, R. N. Koretskyy, S. I. Nichkalo // Фізика і хімія твердого тіла. - 2014. - Т. 15. - № 1. - С. 81-84.
Abstract: Impedance spectroscopy for Si wires with dopant concentrations near the metal-insulator transition in the low temperature range 4.2 - 70 K and frequencies 0.01 - 250 kHz has been conducted. The studies allow us to obtain parameters of hopping conduction (localization radius, density of localized states and average length of carrier jumping) and compare them with theoretical data.
URI: http://hdl.handle.net/123456789/10123
Appears in Collections:Т. 15, № 1

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