Impedance of Sі Wires at Metal-Insulator Transition

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/10123

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DC Field	Value	Language
dc.contributor.author	Druzhinin, A.	-
dc.contributor.author	Ostrovskii, I.	-
dc.contributor.author	Khoverko, Yu.	-
dc.contributor.author	Koretskyy, R.	-
dc.contributor.author	Nichkalo, S.	-
dc.date.accessioned	2021-06-09T08:42:13Z	-
dc.date.available	2021-06-09T08:42:13Z	-
dc.date.issued	2014	-
dc.identifier.citation	Druzhinin A. A. Impedance of Sі Wires at Metal-Insulator Transition / A. A. Druzhinin, I. P. Ostrovskii, Yu. N. Khoverko1, R. N. Koretskyy, S. I. Nichkalo // Фізика і хімія твердого тіла. - 2014. - Т. 15. - № 1. - С. 81-84.	uk_UA
dc.identifier.uri	http://hdl.handle.net/123456789/10123	-
dc.description.abstract	Impedance spectroscopy for Si wires with dopant concentrations near the metal-insulator transition in the low temperature range 4.2 - 70 K and frequencies 0.01 - 250 kHz has been conducted. The studies allow us to obtain parameters of hopping conduction (localization radius, density of localized states and average length of carrier jumping) and compare them with theoretical data.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Vasyl Stefanyk Precarpathian National University	uk_UA
dc.subject	magnetoresistance	uk_UA
dc.subject	impedance spectroscopy	uk_UA
dc.subject	localization radius	uk_UA
dc.title	Impedance of Sі Wires at Metal-Insulator Transition	uk_UA
dc.type	Article	uk_UA
Appears in Collections:	Т. 15, № 1

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