Please use this identifier to cite or link to this item:
Title: Quasichemical modelling of defect subsystem of tin telluride crystals
Authors: Prokopiv, V.
Turovska, L.
Nykyruy, L.
Horichok, I.
Keywords: Equilibrium constants; Point defects; Quasichemistry; Tin telluride; Two-temperature annealing
Issue Date: Jul-2017
Publisher: Chalcogenide Letters
Citation: Prokopiv, V. V., Turovska, L. V., Nykyruy, L. I., & Horichok, I. V. (2016). Quasichemical modelling of defect subsystem of tin telluride crystals. Chalcogenide Letters, 13(7), 309-315.
Abstract: By the method of modelling with quasichemical reactions, formation of native atomic defects in tin telluride crystals has been described. Based on the analysis of electroneutrality condition, concentration dependences of charge carriers and point defects on the temperature and partial vapour pressure of tellurium have been found. The constants of corresponding reactions have been specified.
Appears in Collections:Статті та тези (ФТФ)

Files in This Item:
File Description SizeFormat 
309_ProkopivV.pdf714.36 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.