Quasichemical modelling of defect subsystem of tin telluride crystals

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/3023

Title:	Quasichemical modelling of defect subsystem of tin telluride crystals
Authors:	Prokopiv, V. Turovska, L. Nykyruy, L. Horichok, I.
Keywords:	Equilibrium constants; Point defects; Quasichemistry; Tin telluride; Two-temperature annealing
Issue Date:	Jul-2017
Publisher:	Chalcogenide Letters
Citation:	Prokopiv, V. V., Turovska, L. V., Nykyruy, L. I., & Horichok, I. V. (2016). Quasichemical modelling of defect subsystem of tin telluride crystals. Chalcogenide Letters, 13(7), 309-315.
Abstract:	By the method of modelling with quasichemical reactions, formation of native atomic defects in tin telluride crystals has been described. Based on the analysis of electroneutrality condition, concentration dependences of charge carriers and point defects on the temperature and partial vapour pressure of tellurium have been found. The constants of corresponding reactions have been specified.
URI:	http://hdl.handle.net/123456789/3023
Appears in Collections:	Статті та тези (ФТФ)

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