Thermodynamics of defect subsystem in zinc telluride crystals

Abstract

Using method on the base of minimizing of thermodynamic potential in "crystal-vapor" system as a function of defect concentration the equilibrium concentration of point defects and free charge carriers in zinc telluride (ZnTe) crystals have been calculated depending on the technological factors of two-Temperature annealing (annealing temperature T and vapor pressure PZn of zinc or PTe of tellurium). It is shown that the dominant defects are zinc vacancies the charge state of which depends on the technological conditions of annealing.