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Other Titles: Стаття
Authors: Прокопів, Володимир Васильович
Горічок, Ігор Володимирович
Горгула, Галина Ярославівна
Пилипонюк, Марія Андріївна
Keywords: semiconductors, point defects, defect formation energy
Issue Date: 2016
Citation: Ukr. J. Phys. 2016. Vol. 61, No. 11
Series/Report no.: Ukrainian Journal of Physics;2016. Vol. 61, No. 11
Abstract: Using the extended H¨uckel method and the methods based on thermochemical, thermodynamic, and electrophysical data, the energies of vacancy formation in AII𝐵VI, AIIIBV, and AIVBVI semiconductor crystals have been determined. A correlation of the obtained values with one another and with the literature experimental and ab initio theoretical data is established. This testifies to the adequacy of the applied methods and to a possibility of using them for the estimation of the defect concentration in semiconductors.
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