Distribution of radiation defects on thickness of IV-VI thin films at alapha-irradiation

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/3704

Title:	Distribution of radiation defects on thickness of IV-VI thin films at alapha-irradiation
Other Titles:	Розподіл радіаційних дефектів в тонких плівках при альфа-опроміненні
Authors:	Салій, Ярослав Петрович Фреїк, Дмитро Михайлович Стефанів, Наталія Ярославівна
Keywords:	радіаційні дефекти, тонкі плівки, альфа-опромінення
Issue Date:	17-May-2010
Publisher:	НАН Україна
Citation:	тези конференції
Abstract:	Irradiation of materials by easy particles with energy 0,1 - 10 MeV plays an important role at creation of semiconductor devices. The decision of problem of control of semiconductor properties of material by irradiation is impossible without understanding of the mechanism of interaction of irradiation with a solid and influence of defects on his properties. Exactly defects in undoped films of lead chalcogenides and tin are responsible for their semiconductor properties.
Description:	Спільна робота з аспірантом
URI:	http://hdl.handle.net/123456789/3704
ISSN:	1729-4428
Appears in Collections:	Статті та тези (ФТФ)

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