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http://hdl.handle.net/123456789/3704
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DC Field | Value | Language |
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dc.contributor.author | Салій, Ярослав Петрович | - |
dc.contributor.author | Фреїк, Дмитро Михайлович | - |
dc.contributor.author | Стефанів, Наталія Ярославівна | - |
dc.date.accessioned | 2020-04-02T07:46:35Z | - |
dc.date.available | 2020-04-02T07:46:35Z | - |
dc.date.issued | 2010-05-17 | - |
dc.identifier.citation | тези конференції | uk_UA |
dc.identifier.issn | 1729-4428 | - |
dc.identifier.uri | http://hdl.handle.net/123456789/3704 | - |
dc.description | Спільна робота з аспірантом | uk_UA |
dc.description.abstract | Irradiation of materials by easy particles with energy 0,1 - 10 MeV plays an important role at creation of semiconductor devices. The decision of problem of control of semiconductor properties of material by irradiation is impossible without understanding of the mechanism of interaction of irradiation with a solid and influence of defects on his properties. Exactly defects in undoped films of lead chalcogenides and tin are responsible for their semiconductor properties. | uk_UA |
dc.description.sponsorship | Прикарпатський національний університет | uk_UA |
dc.language.iso | en_US | uk_UA |
dc.publisher | НАН Україна | uk_UA |
dc.subject | радіаційні дефекти, тонкі плівки, альфа-опромінення | uk_UA |
dc.title | Distribution of radiation defects on thickness of IV-VI thin films at alapha-irradiation | uk_UA |
dc.title.alternative | Розподіл радіаційних дефектів в тонких плівках при альфа-опроміненні | uk_UA |
dc.type | Thesis | uk_UA |
Appears in Collections: | Статті та тези (ФТФ) |
Files in This Item:
File | Description | Size | Format | |
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Tezy Polsha.doc | 1.03 MB | Microsoft Word | View/Open |
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