Distribution of Radiation Defects on Thickness of IV-VI Thin Films at a-Irradiation

Abstract

Irradiation of materials by easy particles with energy 0.1-10 MeV plays an important role at creation of semiconductor devices. Exactly defects in undoped films of lead chalcogenides and tin are responsible for their semiconductor properties. For analysis of damages profile it is possible to use the method which is based on the change of electrical resistance of thin sample. Thus, to define the degree of damages with depth for weakening of flood foils of different thickness are putted. The calculation of profiles of ionization loss and damages of crystalline lattice under the action of monoenergetic a-particle beam is actual for the tasks of modification of properties of semiconductor materials; for development, choice of the regimes of exploitation and radiation firmness of detectors of ionizing radiation. For the purpose of reception of a primary information about the distribution of electrically active defects in samples is applied the method witch connected with measuring of bulk resistance of films of different thickness. The spatial distribution of ionization and nuclear loss of energy by fast α-particles in AIVBVI semiconductors was calculated.