Please use this identifier to cite or link to this item:
Title: Distribution of own defects in monocrystal epitaxial films PbTe
Other Titles: Розподіл власних дефектів в монокристалічних тонких плівках PbTe
Authors: Салій, Ярослав Петрович
Стефанів, Наталія Ярославівна
Keywords: lead chalcogenides, thin films,dimensional effects, heterogeneity
Issue Date: 13-Nov-2011
Publisher: Condensed Matter Physics 2010, Vol. 13, No 1, xxxxx: 1–??
Citation: стаття
Abstract: Was shown, that dimensional effects in the monocrystal PbTe n-type films which has been grown on mica substrates by the method of a hot wall, connected with distributions of dopands and the centres of dispersion of free charge carriers. Approximation of experimental effective dependences of conductivity ¾(d) and product of Hall coefficient and square of conductivity R(d)¾2(d) from a thickness by theoretical dependences was executed.Spatial parameters of distributions of defects of growth on a boundary substrate-film and dislocations in a following layer were received. Proceeding from layered heterogeneity of the thin semiconductor PbTe films which has been grown by the method of a hot wall, were found three layers enriched free electrons to different values of concentration and two layers of the centres of dispersion connected with different types of crystal defects: interphase boundaries, dislocations, dot defects and other.
Description: Робота з аспірантом
ISSN: 1729-4428
Appears in Collections:Статті та тези (ФТФ)

Files in This Item:
File Description SizeFormat 
Distribution of own defects in monocrystal Sa St.pdf168.34 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.