Modified Pearson model for high-energy multi-charge implantation and impurity activation for sensor microsystems

Abstract

The mathematical Gauss and Pearson models, that qualitatively determine the physical processes of ion doping of acceptor (p) and donor (n) impurities, are used for the simulation of silicon submicron large scale integrated (LSI) structures. Such models are the basis of CAD-technology for calculating the concentration profiles of diode and transistor structures. This paper presents a modified Pearson model, which with high accuracy simulates the process of dual multicharge implantation of boron (B+, B++) and phosphorus (P+, P++) ions at the process of the formation of the isotype p+-p and n+-n contacts, which at present form the basis of combined drain-source areas of the CMOS submicron high speed structures.